Abstract
CdTe films were prepared at room temperature by using two-step method. In the first step, Cd layer was deposited electrochemically on Pt substrate and in the second step, CdTe films were formed chemically by dipping substrate covered with Cd into the solution containing telluride ions. The properties of deposited CdTe films were investigated. Using XRD method, it was found that the formed CdTe films are polycrystalline with cubic structure. Raman and XPS spectra revealed that deposits contain not only CdTe but also some amount of TeO2 and probably CdO or Cd(OH)2, as well. The optical band gap energy determined using UV-Vis spectra was in the range of 1.4-1.6 eV depending on the length of time of Cd deposition. The changes in deposited films photoactivity under illumination in the telluride solution indicated the formation of n-type of CdTe films.