Abstract
The results of the influence of electrodeposition conditions on the structural, compositional, optical, and photoelectrochemical properties of CdTe thin films deposited in one-step electrochemical method are presented. The CdTe films were prepared electrochemically from aqueous acidic solution with low ratios of Cd2+ ions to Te(IV) ions concentration. Instead of commonly used TeO2, water-soluble Na2TeO3 was used as a source of tellurium ions. The cathodic deposition of CdTe was performed at different constant potentials from solutions containing different cadmium and tellurium ions concentration. As-deposited CdTe thin films were studied by different analytical techniques. The X-ray photoelectron spectroscopy spectra exhibited CdTe formation on the electrode with some amount of tellurium oxides and cadmium oxides. The best quality CdTe deposits, free of TeO2, were formed in bath containing excess of Cd2+ ions and at the potential of -0.65 V vs. saturated calomel electrode, slightly more positive than E (eq) of Cd/Cd2+ system. Structural X-ray diffraction studies revealed polycrystallinity of deposits with the highest content of the (111)-oriented cubic (111) form. Optical band gap energy values were found in the range from 1.36 to 1.6 eV for CdTe films prepared at various synthesis conditions. The preliminary photoelectrochemical studies have shown that the variation of the deposition potential as well as bath composition leads to the formation of p- or n-type CdTe films. As-deposited CdTe films were not stable in polysulfide solution under illumination.